Products

InAs (Indium Arsenide )wafer
PAM-XIAMEN provides InAs wafer ( Indium Arsenide ) to optoelectronics industry in diameter up to 2 inch .
InAs crystal is a compound  formed by 6N pure In and As element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 15000 cm -3 . InAs crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . 
We have "epi ready " InAs products with wide  choice in exact or off orientation , low or high doped concentration and surface finish . Please contact us for more product information .
1)2”InAs 
Type/Dopant:N/S
Orientation[111B]±0.5°
Thickness500±25um
Epi-Ready
SSP
2)2”InAs
Type/Dopant:N/Undoped
Orientation : (111)B
Thickness500um±25um
SSP
3)2”InAs
Type/Dopant:N/Undoped
Orientation : <111>A ±0.5°
Thickness500um±25um
epi-ready
Ra<=0.5nm
Carrier Concentration(cm-3):1E16~3E16
Mobility(cm -2 ):>20000 
EPD(cm -2 ):<15000 
SSP
4)2”InAs
Type/Dopant:N/Undoped
Orientation : <100> with [001]O.F.
Thickness2mm
AS cut
5)2”InAs 
Type/Dopant:N/P type
Orientation (100), 
Carrier Concentration(cm-3)(5-10)E17,
Thickness500 um 
SSP
All wafers are offered with high quality epitaxy ready finishing. Surfaces are characterised by in-house, advanced optical metrology techniques which include Surfscan haze and particle monitoring, spectroscopic ellipsometry and grazing incidence interferometry
Relative products:
InAs wafer
InSb wafer
InP wafer
GaAs wafer
GaSb wafer
GaP wafer
If you are more interesting in inas wafer,Please send emails to us;sales@powerwaywafer.com,and visit our website:www.powerwaywafer.com.

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