Products

InAs (Indium Arsenide )wafer

PAM-XIAMEN provides InAs wafer ( Indium Arsenide ) to optoelectronics industry in diameter up to 2 inch .

InAs crystal is a compound  formed by 6N pure In and As element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 15000 cm -3 . InAs crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth .

We have "epi ready " InAs products with wide  choice in exact or off orientation , low or high doped concentration and surface finish . Please contact us for more product information .

1)2”InAs

Type/Dopant:N/S

Orientation：[111B]±0.5°

Thickness：500±25um

Epi-Ready

SSP

2)2”InAs

Type/Dopant:N/Undoped

Orientation : (111)B

Thickness：500um±25um

SSP

3)2”InAs

Type/Dopant:N/Undoped

Orientation : <111>A ±0.5°

Thickness：500um±25um

epi-ready

Ra<=0.5nm

Carrier Concentration(cm-3):1E16~3E16

Mobility(cm -2 ):>20000

EPD（cm -2 ）:<15000

SSP

4)2”InAs

Type/Dopant:N/Undoped

Orientation : <100> with [001]O.F.

Thickness：2mm

AS cut

5)2”InAs

Type/Dopant:N/P type

Orientation ：(100),

Carrier Concentration(cm-3)：(5-10)E17,

Thickness：500 um

SSP

All wafers are offered with high quality epitaxy ready finishing. Surfaces are characterised by in-house, advanced optical metrology techniques which include Surfscan haze and particle monitoring, spectroscopic ellipsometry and grazing incidence interferometry

Relative products:

InAs wafer

InSb wafer

InP wafer

GaAs wafer

GaSb wafer

GaP wafer

If you are more interesting in inas wafer,Please send emails to us;sales@powerwaywafer.com,and visit our website:www.powerwaywafer.com.