The effect of low temperature swift heavy ion (LT-SHI) implantation on InAs(1 0 0) and InSb(1 0 0) wafers have been investigated. SHI implantation was carried out with 70 MeV silicon (Si5+) ions with fluences of 1 × 1010, 1 × 1011, 1 × 1012 and 1 × 1013 ions/cm2 at room temperature (RT) and liquid nitrogen temperature (LNT). The X-ray diffraction peak intensity of the LT-SHI implanted sample increases with respect to the ion fluences, while the full width half maximum (FWHM) value decreases correspondingly with the increase of ion fluences for both InAs and InSb samples. Whereas the X-ray diffraction peak intensity decreases with respect to the increase of ion fluences for the samples implanted at RT. Scanning electron microscopy (SEM) was used in cross-sectional mode to analyze the penetration depth of silicon ions in InAs and InSb wafers. Atomic force microscopy revealed that the average surface roughness values (Rrms) of InAs and InSb samples implanted at LNT, decreased with the increase of ion fluences while an opposite effect has been observed in the case of RT implanted samples. The present study has confirmed the improvement in the structural and surface properties of InAs and InSb wafers when they are subjected to LT-SHI implantation with 70 MeV silicon (Si5+) ions.
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