Extremely low density InAs quantum dots realized in situ on (100) GaAs

Extremely low density self-assembled InAs quantum dots are grown by a combination technique of in situ annealing for 2 min and pause of substrate rotation during molecular beam epitaxy. The surface morphology and structural characteristics of the quantum dots are scrutinized by atomic force microscopy and photoluminescence spectra. It is found that the quantum dot size and density increase as the InAs deposition amount rises. Quantum dots with a density between 2.5 × 107 cm−2and 2.2 × 108 cm−2 are 2–5 nm in height and 18–39 nm in diameter. It is believed that as-grown InAs nanodots may be of important value for future single quantum dot research.

Source:IOPscience

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Swift heavy ion-induced interface mixing in In/Sb

In/Sb is integrated with Si by a process of high energy heavy ion beam mixing. The samples of In/Sb deposited on the Si substrate were irradiated using 100 MeV Au ions having fluences from 1 × 1012 to 6 × 1013 ions cm−2. Phase formation due to ion beam mixing was detected using high-resolution x-ray diffraction measurements. X-ray photoelectron spectroscopy measurements indicated that both In and Sb were embedded in the Si substrate with an irradiation dose of 3 × 1013 ions cm−2. Formation of InSb phase was observed in the irradiated sample, at a fluence of 1 × 1013 ions cm−2and higher, without any post-irradiation annealing.

Source:IOPscience

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Evaluation of InAs quantum dots on Si as optical modulator

The potential of using InAs quantum dots, epitaxially grown on a Si substrate, as an optical modulator have been investigated. By exploiting the quantum-confined Stark effect across the quantum dot layers we were able to increase the absorption in the dot layers at a chosen wavelength. This resulted in the first demonstration of an extinction ratio of 5.1 dB at 1310 nm with a reverse bias of 20 V. Higher extinction ratios of 8.6 dB at 7 V and 21.6 dB at 20 V bias were observed at a wavelength of 1355 nm.

Source:IOPscience

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