We present 1.3 µm InAs/GaAs quantum dot lasers on Si substrates operating at high temperatures. Our lasers are fabricated through epitaxial growth on GaAs substrates of the InAs/GaAs quantum dot laser double heterostructure, and subsequent GaAs/Si wafer bonding and layer transfer onto Si substrates. Both of the on-Si lasers by direct- and metal-mediated bonding exhibit lasing temperatures over 100 °C. Partial p-type doping in the InAs/GaAs quantum dot core layer is found to significantly increase the characteristics temperature T. This result verifies the suitability of III–V quantum dot lasers as a light source in Si photonic integrated circuits.
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