InAs wafer: 三月 2018

2018年3月13日星期二

High-Temperature 1.3 µm InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding

We present 1.3 µm InAs/GaAs quantum dot lasers on Si substrates operating at high temperatures. Our lasers are fabricated through epitaxial growth on GaAs substrates of the InAs/GaAs quantum dot laser double heterostructure, and subsequent GaAs/Si wafer bonding and layer transfer onto Si substrates. Both of the on-Si lasers by direct- and metal-mediated bonding exhibit lasing temperatures over 100 °C. Partial p-type doping in the InAs/GaAs quantum dot core layer is found to significantly increase the characteristics temperature T0. This result verifies the suitability of III–V quantum dot lasers as a light source in Si photonic integrated circuits.

Source:IOPscience

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2018年3月6日星期二

Uniform and position-controlled InAs nanowires on 2'' Si substrates for transistor applications

This study presents a novel approach for indirect integration of InAs nanowires on 2'' Si substrates. We have investigated and developed epitaxial growth of InAs nanowires on 2'' Si substrates via the introduction of a thin yet high-quality InAs epitaxial layer grown by metalorganic vapor phase epitaxy. We demonstrate well-aligned nanowire growth including precise position and diameter control across the full wafer using very thin epitaxial layers (<300 nm). Statistical analysis results performed on the grown nanowires across the 2'' wafer size verifies our full control on the grown nanowire with 100% growth yield. From the crystallographic viewpoint, these InAs nanowires are predominantly of wurtzite structure. Furthermore, we show one possible device application of the aforementioned structure in vertical wrap-gated field-effect transistor geometry. The vertically aligned InAs nanowires are utilized as transistor channels and the InAs epitaxial layer is employed as the source contact. A high uniformity of the device characteristics for numerous transistors is further presented and RF characterization of these devices demonstrates an ft of 9.8 GHz.