The growth of SbTe layers by means of hot wall epitaxy is investigated. While the layers grow coherently on InAs(1 1 1) substrates owing to the small lattice mismatch, the appropriate substrate temperature is restricted to a narrow range and the surface preparations play a critical role for the growth due to the rapid re-evaporation of SbTe. We also examine the growth on various substrates having a pre-deposited Cu layer. The Cu layer retains SbTe at the surface and thus extends the usable substrate-temperature range. During the substitution of the Sb atoms with the Cu atoms, we encounter an incorporation of the group-III elements to the grown layers when III–V compounds are used as the substrates. We additionally present the low-temperature magnetotransport properties in a layer synthesized by the substitution.
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