Two similar samples of InAs or GaAs quantum dots and their response to annealing at 700°C have been studied using scanning transmission electron microscopy. The only difference in the growth of both samples is the inclusion of p-doping by carbon in the GaAs barriers between the quantum dots in one of the wafers. The size and line density of and the change of indium concentration within the quantum dots have been investigated to understand the effect of carbon doping on the diffusion of indium atoms within the structures during the anneal.
Source:IOPscience
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