Undoped InAs and InAs p-n junction epitaxial layers were grown on (100)-cut InP substrates with molecular beam epitaxy. The lattice difference between the substrate and the InAs layers was matched with a graded AlInAs buffer layer. The alloy composition, structural characteristics and carrier mobility of the structures were determined from the high-resolution x-ray diffraction, atomic force microscopy and Hall-effect measurements, respectively. The optical parameters of the layers were characterized by the emission of terahertz (THz) pulses when the samples were illuminated with femtosecond laser pulses. It has been found that the built-in electric field in the p-n junction enhances the THz emission. Registering THz signals in the quasi-reflection direction, the p-n junction emits more intense radiation in comparison to an undoped bulk InAs. At excitation wavelengths >1.8 μm the InAs p-n junction provides stronger THz pulses than those from (111)-cut p-InAs, the best surface THz emitter known to date. The epitaxial layers were also exposed to a constant magnetic field from neodymium permanent magnets, which further enhances THz emission and allows registering THz radiation in the line-of-sight terahertz time-domain-spectroscopy geometry.
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