Electrical conduction of C-implanted InAs single crystal
Carbon-ion-implanted InAs was investigated using double-crystal x-ray diffraction (DCXRD), Hall measurement and infrared absorption (IR) analysis. Multiple implantation were made at 0.1–0.4 MeV with 6.0 × 1012–2.0 × 1013 ions cm−2. After rapid thermal annealing at 300 °C for 20 s, the implantation-induced damage was removed substantially, indicating the recovery of crystallinity. The results of Hall measurement reveal strong electrical compensation and low conductivity in the implanted layer of the sample, suggesting the formation of acceptor CAs. In contrast, the lowest IR transmittance is observed in the 300 °C annealed sample, implying the existence of acceptor with significant concentration. The implanted layer turned to n-type after annealing at 400 °C with the increasing transmittance. After annealing at temperature of 500 °C, the decreasing carrier concentration and the increasing transmittance is attributed to the competition between the decomposition of C–H complexes and the formation of donor centers C–C.