Doping density profiling in InAs is difficult
due to lack of good quality Schottky contacts and the narrow bandgap nature of
the material. The electrolyte can be used to form a Schottky-like contact but
the inversion layer formation does not allow obtaining a dopant concentration
in low doped InAs. To overcome this issue, a pulse CV technique has been
implemented to drive a sample into the deep depletion mode which makes it
possible to use the depletion approximation to calculate a carrier
concentration. The measured capacitance-voltage characteristics were compared
with the simulation and showed good agreement with it.
Source:IOPscience
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