Doping density profiling in InAs is difficult due to lack of good quality Schottky contacts and the narrow bandgap nature of the material. The electrolyte can be used to form a Schottky-like contact but the inversion layer formation does not allow obtaining a dopant concentration in low doped InAs. To overcome this issue, a pulse CV technique has been implemented to drive a sample into the deep depletion mode which makes it possible to use the depletion approximation to calculate a carrier concentration. The measured capacitance-voltage characteristics were compared with the simulation and showed good agreement with it.
For more information, please visit our website:send us email at email@example.com and firstname.lastname@example.org