Fabrication of two-color surface emitting device of a coupled vertical cavity structure with InAs quantum dots formed by wafer bonding

We fabricated a two-color surface emitting device of a coupled cavity structure, which is applicable to terahertz light source. GaAs/AlGaAs vertical multilayer cavity structures were grown on (001) and (113)B GaAs substrates and the coupled multilayer cavity structure was fabricated by wafer bonding them. The top cavity contains self-assembled InAs quantum dots (QDs) as optical gain materials for two-color emission of cavity-mode lights. The bonding position was optimized for the equivalent intensity of two-color emission. We formed a current injection structure, and two-color emission was observed by current injection, although no lasing was observed.

Source:IOPscience

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