Electronic structure of reconstructed InAs(001) surfaces — identification of bulk and surface bands based on their symmetries

Highlights

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We study InAs(001) surface electronic structure using ARPES.

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We show that identification of surface and bulk electronic bands is possible based on their symmetries.

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The study is done for both In-terminated and As-terminated InAs(001) surfaces.

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Abstract

Using angle-resolved photoelectron spectroscopy (ARPES) band structures of indium- and arsenic-terminated InAs(001) surfaces are investigated. These surfaces are highly reconstructed, elementary cells of their lattices contain many atoms in different chemical configurations, and moreover, they are composed of domains having related but different reconstructions. These domain-type surface reconstructions result in the reciprocal spaces containing regions with well-defined ${\stackrel{}{}}_{}$-vector and regions with not-well-defined one. In the ARPES spectra most of the surface related features appear as straight lines in the indeterminate ${\stackrel{}{}}_{}$-vector space. It is shown that, thanks to differences in crystal and surface symmetries, the single photon energy ARPES may be successfully used for classification of surface and bulk bands of electronic states on complex, highly reconstructed surfaces instead of the most often used variable photon energy studies.

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Graphical abstract

Keywords

• Angle-resolved photoelectron spectroscopy (ARPES); 
• InAs; 
• Electronic band structure; 
• Surface states
• Source:Sciencedirect

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