Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires
We study 2 critical issues (interface abruptness and strain release) in InAs/GaAs NWs.
Structural and chemical interface sharpness ≤1.5 nm, better than in previous reports.
Simultaneous elastic and plastic relaxation is shown that agrees with FEM simulations.
Structural, chemical and strain release investigations were performed by STEM.
New MBE self-seeded method whereby InAs is grown by splitting In and As depositions.
The structure, interface abruptness and strain relaxation in InAs/GaAs nanowires grown by molecular beam epitaxy in the Ga self-catalysed mode on (111) Si have been investigated by transmission electron microscopy. The nanowires had the zincblende phase. The InAs/GaAs interface was atomically and chemically sharp with a width around 1.5 nm, i.e. significantly smaller than previously reported values. This was achieved by the consumption of the Ga droplet and formation of a flat top facet of the GaAs followed by the growth of InAs by splitting the depositions of In and As. Both elastic and plastic strain relaxation took place simultaneously. Experimental TEM results about strain relaxation very well agree with linear elasticity theory calculations by the finite element methods.