Simple synthesis of ultra-high quality In2S3 thin films on InAs substrates

Highlights

•

Extremely high-quality tetragonal β-In₂S₃ thin films firmly remained on the InAs substrate for the first time.

•

New growth technique for high quality In₂S₃ crystals by adopting simple thermal sulfurization of InAs substrates.

•

In₂S₃ crystals are of remarkable crystal quality.

Abstract

We report a simple and reliable technique to synthesize high-quality In₂S₃ films on InAs substrates by using thermal sulfurization in a hot-wall tube furnace. X-ray diffraction and energy dispersive X-ray spectroscopy data confirmed that the synthesized films were cubic β-In₂S₃ or tetragonal β-In₂S₃, depending on growth conditions. Field emission scanning electron microscopy analysis and Raman spectroscopy showed that the In₂S₃ films are of remarkable crystal quality. Especially, by optimizing the growth conditions, we have grown an extremely high-quality tetragonal β-In₂S₃ thin film firmly remained on the InAs substrate, for the first time.

Keywords

• Indium-sulfide; 
• Thin films; 
• X-ray diffraction (XRD); 
• Scanning electron microscopy (SEM);
• Raman spectroscopy
• • • • Source:Sciencedirect
      If you are more interesting in InAs wafer,Please send emails to us:sales@powerwaywafer.com,and visit our wabsite:www.powerwaywafer.com.