The growth of the InAs film directly on the Si substrate deflected from the plane (100) at 4° towards (110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topography has been investigated for a set of samples. The results show that the highest electron mobility is in the sample, in which the 10-nm InAs nucleation layer is grown at a low temperature of 320 °C followed by ramping up to 560 °C, and the nucleation layer was annealed for 15 min and the second layer of InAs is grown at 520 °C. The influence of different buffer layers on the electron mobility of the samples has also been investigated, which shows that the highest electron mobility of at 300 K is obtained in the sample grown on a thick and linearly graded InGaAlAs metamorphic buffer layer deposited at 420 °C.
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