We investigated the gas flow sequence to
realize a short-period and lattice-matched InAs/GaAsSb superlattice on an InAs
substrate by metalorganic vapor phase epitaxy (MOVPE) growth for applications
in mid-infrared photonic devices. The arsenic composition of GaAsSb for lattice
matching was adjusted by adding AsH3 flow to residual arsenic incorporation.
The growth conditions for lattice-matched superlattices at a period of 5 nm
were found. The superlattices with period thicknesses of 1 to 9 nm were
successfully confirmed by the photoluminescence (PL) peak in the range from 2.4
to 5 µm depending on layer thickness at 20 K. The emission wavelength can be
controlled by changing the layer thickness of superlattices. The results led to
the improvement of InAs/GaAsSb type II superlattice growth.
Source:IOPscience
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