A GaAs/AlAs coupled multilayer cavity
structure with InAs quantum dots (QDs) was fabricated by wafer-bonding of two
cavity structures grown individually. The wafer-bonding technique is important
to control the spatial distribution of nonlinear polarization for strong
terahertz emission by the differential frequency generation of the two cavity
modes of the coupled cavity. Three layers of self-assembled InAs QDs were
inserted in a cavity grown on a (001) GaAs substrate as optical gain materials
for two-color emission of the cavity mode lights. The other cavity with a GaAs
cavity layer was grown on a (113)B GaAs substrate. Two-color emissions with a
3.8 THz frequency difference were successfully observed from the wafer-bonded
coupled cavity by cw optical pumping at room temperature.
Source:IOPscience
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