Type II InSb/InAs quantum dots (QDs) were
successfully grown on GaAs substrates using three different metamorphic buffer
layer (MBL) designs. The structural properties of the resulting metamorphic InAs
buffer layers were studied and compared using cross-sectional transmission
electron microscopy and high resolution x-ray diffraction measurements.
Photoluminescence (PL) originating from the InSb QDs was observed from each of
the samples and was found to be comparable to the PL of InSb QDs grown onto
homo-epitaxially deposited InAs. The 4 K PL intensity and linewidth of InSb QDs
grown onto a 3 µm thick InAs buffer layer directly deposited onto GaAs proved
to be superior to that from QDs grown onto an InAs MBL using either AlSb or
GaSb interlayers. Light-emitting diode structures containing ten layers of InSb
QD in the active region were subsequently fabricated and electroluminescence
from the QDs was obtained in the mid-infrared spectral range up to 180 K. This
is the first step towards obtaining mid-infrared InSb QD light sources on GaAs
substrates.
Source:IOPscience
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