Effect of the growth mode on the two- to three-dimensional transition of InAs grown on vicinal GaAs(001) substrates

Some differences were observed between conventional molecular-beam epitaxy (MBE) and mobility enhanced epitaxy (MEE) of InAs on a vicinal GaAs(001) substrate in the variation of the number density N of the InAs islands, with additional InAs coverage (θ−θc) after the critical InAs coverage θc during the two- to three-dimensional (2D–3D) transition. For MBE the variation was consistent with the power law N(θ)~(θ−θc)α; while for MEE, the linear relation N(\theta) \propto (\theta-\theta_{\mathrm {c}})  was observed. The difference is discussed in terms of the randomness in the nucleation of the InAs islands.

Source:IOPscience

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