In this paper, we report the first liquid phase epitaxial growth of InAs epitaxial layers using 100% Bi solvent. At a growth temperature of 470 °C, the layers are macroscopically mirror like and the obtained growth rate is ~40 nm min−1. High-resolution XRD measurements reveal perfect lattice matching between the layer and the substrate, very good structural quality of the layers and less than 0.07% content of substitutional Bi in the layer. Raman spectra from background-doped layers are indicative of carrier concentration near the epilayer surface of less than 1016 cm−3, while assessment of these layers by means of infrared reflectance spectroscopy points to carrier concentration in the bulk of the layers of the order of 1 × 1015 cm−3. 4 K photoluminescence spectra from the same layers exhibit excitonic lines with half-widths ≤3 meV, which is a signature for electron concentration comparable to the known critical Mott density in InAs of ~5 × 1014 cm−3. We attribute the low background doping of the epitaxial layers to the low dissolution in Bi of Si and other residual impurities at 470 °C.
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