We demonstrated high performance long
wavelength InAs/GaAs0.09Sb0.91 type-II superlattices infrared photo-detectors
grown on InAs substrates. Superlattices photodiodes with InAs layer thickness
from 14 to 24 ML showed 50% cutoff wavelength from 6 to 12.5 μm while the
lattice-mismatch was kept smaller than 4.0 × 10−4 without any additional
interface layers for strain balance. Quantum efficiency spectra showed
oscillating characteristics which were attributed to the plasma effect in the
highly doped InAs buffer layers. The absorption coefficient of 1800 cm−1 and
diffusion length of 10 μm of minority carriers in the SLs on InAs have been
obtained through simulation. A photodiode exhibited a 12.5 μm cutoff wavelength
with a peak detectivity of 7.4 × 1010 cm Hz1/2 W−1 and 2.6 × 1011 cm Hz1/2 W−1
at 76 K and 52 K, respectively.
Source:IOPscience
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